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9916H Advanced Power Electronics AP9916H

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Dra...
Features bient Max. Max. Value 2.5 110 Unit ℃/W ℃/W Data and specifications subject to change without notice 200227032 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr AP9916H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250u...

Datasheet PDF File 9916H Datasheet - 144.40KB

9916H  






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