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9916H - AP9916H

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Part Number Description Manufacturer
9918H N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Silicon Standard

Other Datasheets by Advanced Power Electronics Corp

Part Number Description
9916H AP9916H
9915H AP9915H
9918H N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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www.DataSheet.co.kr AP9916H/J Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low drive current ▼ Single Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 18V 25mΩ 35A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 18 ± 12 35 16 90 50 0.
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