Datasheet Details
| Part number | AP01N40G-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 52.38 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 AP01N40G-HF Datasheet
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| Part number | AP01N40G-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 52.38 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
AP01N40G-HF Datasheet
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Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
S SOT-89 D G Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating 400 +20 0.2 0.14 0.8 1.25 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 100 Units ℃/W 1 201005191 Data & specifications subject to change without notice AP01N40G-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=0.2A VDS=VGS, ID=250uA VDS=10V, ID=0.2A VDS=400V, VGS=0V VGS=+20V, VDS=0V ID=1A VDS=320V VGS=10V VDD=200V ID=1A RG=3.3Ω VGS=10V VGS=0V VDS=25V f=1.0MHz Min.
400 1 - Typ.
AP01N40G-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ 100% Avalanche Test ▼ Fast Switching Performance ▼ Simple Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID D 400V 16Ω 0.
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