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AP01N40J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.

The TO-251 package is widel y preferred for commercial- industrial through-hole applications.

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Datasheet Details

Part number AP01N40J
Manufacturer Advanced Power Electronics
File Size 61.67 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP01N40J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ 100% Avalanche Rated ▼ Fast Switching Performance ▼ Simple Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 400V 16Ω 0.5A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-251 package is widel y preferred for commercial- industrial through-hole applications. G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 400 ±20 0.5 0.4 2 17.
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