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AP01N40G-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ 100% Avalanche Test ▼ Fast Switching Performance ▼ Simple Drive Requirement
G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
D
400V 16Ω 0.2A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S
SOT-89
D G
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current
1 3 3
Rating 400 +20 0.2 0.14 0.8 1.