Datasheet Details
| Part number | AP0603GH |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 89.35 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP0603GH Download (PDF) |
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| Part number | AP0603GH |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 89.35 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP0603GH Download (PDF) |
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Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, □ ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
BVDSS RDS(ON) ID 30V 6mΩ 72A G D S TO-252(H) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 30 +20 72 45 288 50 -55 to 150 -55 to 150 Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Value 2.5 62.5 Units V V A A A W ℃ ℃ Units ℃/W ℃/W Data & specifications subject to change without notice 1 200903043 AP0603GH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Advanced Power Electronics Corp.
AP0603GH RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic D G.
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