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AP06P20GJ-HF - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

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Full PDF Text Transcription for AP06P20GJ-HF (Reference)

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Advanced Power Electronics Corp. AP06P20GJ-HF Preliminary P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ RoHS Compliant & Halo...

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Lower Gate Charge D ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-251 package is widely preferred for all commercial-industrial through-hole applications and suited for low voltage applications. BVDSS RDS(ON) ID -200V 1.4Ω -4.