Datasheet Details
| Part number | AP1003BST |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 154.49 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP1003BST Download (PDF) |
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| Part number | AP1003BST |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 154.49 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP1003BST Download (PDF) |
|
|
|
The AP1003BST used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible.
The GreenFETTM package is compatible with existing soldering techniques and is ideal for power application, especially for high frequency / high efficiency DC-DC converters.
GreenFETTM D G S S D Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ ID@TC=25℃ IDM PD@TA=25℃ PD@TA=70℃ PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 3 3 4 5 3 3 4 ST Rating 30 +20 17.3 14.3 75 150 2.2 1.4 42 28.8 24 -40 to 150 -40 to 150 Units V V A A A A W W W mJ A ℃ ℃ Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current 1 Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range Thermal Data Rthj-c Rthj-a Maximum Thermal Resistance, Junction-ambient4 Maximum Thermal Resistance, Junction-ambient 3 3 58 ℃/W ℃/W 1 20100809pre Data and specifications subject to change without notice AP1003BST Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=13A VGS=4.5V, ID=11A Min.
AP1003BST Preliminary Advanced Power Electronics Corp.
▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profile ( < 0.7mm ) G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 4.7mΩ 17.
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