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AP1002BMX-3 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The AP1002BMX-3 uses the latest APEC Power MOSFET silicon TM technology with advanced technology GreenFET packaging to provide the lowest on-resistance, a low profile and dual-sided cooling capability.

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Advanced Power Electronics Corp. AP1002BMX-3 N-channel Enhancement-mode Power MOSFET RoHS-compliant, Halogen-free Low Conductance Losses Fast Switching Performance Low Profile (< 0.7mm ) D BV DSS RDS(ON) G S 30V 1.8mΩ 32A ID Description The AP1002BMX-3 uses the latest APEC Power MOSFET silicon TM technology with advanced technology GreenFET packaging to provide the lowest on-resistance, a low profile and dual-sided cooling capability. The GreenFET package is compatible with existing soldering techniques and is ideal for power applications, especially for high-frequency/high-efficiency DC-DC converters.