AP1332GEU Overview
The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, low on-resistance and cost-effectiveness. Data and specifications subject to change without notice 200606051-1/4 AP1332GEU @Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 0.02 1 1.3 0.3 0.5 21 53 100 125 38 17 12 Max.