AP1333GU-HF Overview
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low onresistance and cost-effectiveness. D G S Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -20 +12 -550 -440 -2.5 0.35 0.003 -55 to 150 -55 to 150 Unit V V mA mA A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum 3 Value 360 Unit ℃/W 1 201105094 Data and specifications subject to change without notice AP1333GU-HF Symbol BVDSS ∆BVDSS/∆Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min.
