Datasheet Details
| Part number | AP2301GN-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 93.34 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 AP2301GN-HF Datasheet
|
|
|
| Part number | AP2301GN-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 93.34 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
AP2301GN-HF Datasheet
|
|
|
|
D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating - 20 +12 -2.6 -2.1 -10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit ℃/W Data and specifications subject to change without notice 1 200902046 AP2301GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-5V, ID=-2.8A VGS=-2.8V, ID=-2.0A VDS=VGS, ID=-250uA VDS=-5V, ID=-2A VDS=-20V, VGS=0V o Min.
AP2301GN-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant S SOT-23 G D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 130mΩ - 2.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AP2301GN | P-Channel MOSFET | VBsemi |
 |
AP2301 | 1.5A DDR TERMINATION REGULATOR | BCD Semiconductor |
 |
AP2301 | 2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH | Diodes Incorporated |
| ALLPOWER | AP2301 | P-Channel MOSFET | ALLPOWER |
|
AP2301A | 2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH | Diodes Incorporated |
| Part Number | Description |
|---|---|
| AP2301GN-HF-3 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301GN | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301AGN | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301AGN-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301AGN-HF-3 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301BGN-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301EN-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301N | P-CHANNEL ENHANCEMENT MODE |
| AP2302AGN-HF | N-channel Enhancement-mode Power MOSFET |
| AP2302AGN-HF-3 | N-channel Enhancement-mode Power MOSFET |