Datasheet4U Logo Datasheet4U.com

AP2306AGN-HF-3 - N-channel enhancement mode power MOSFET

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

📥 Download Datasheet

Datasheet preview – AP2306AGN-HF-3

📁 Similar Datasheet

  • AP2306AGN-HF - N-Channel MOSFET (VBsemi)
  • AP2306AGN - N-Channel MOSFET (VBsemi)
  • AP2306GN - N-Channel MOSFET (VBsemi)
  • AP2306GN-HF - N-Channel MOSFET (VBsemi)
  • AP2306N - N-Channel MOSFET (VBsemi)
  • AP2301 - 1.5A DDR TERMINATION REGULATOR (BCD Semiconductor)
  • AP2301 - 2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH (Diodes Incorporated)
  • AP2301 - P-Channel MOSFET (ALLPOWER)
  • AP2301A - 2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH (Diodes Incorporated)
  • AP2301GN - P-Channel MOSFET (VBsemi)
Other Datasheets by Advanced Power Electronics

Full PDF Text Transcription

Click to expand full text
Advanced Power Electronics Corp. AP2306AGN-HF-3 N-channel Enhancement-mode Power MOSFET Supports 2.5V Gate Drive Lower On-resistance Surface-Mount Device RoHS-compliant, Halogen-free D BV DSS RDS(ON) G S 30V 35mΩ 5A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP2306AGN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in medium current applications such as load switches.
Published: |