Datasheet Details
| Part number | AP2306AGEN-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 91.79 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP2306AGEN-HF-AdvancedPowerElectronics.pdf |
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Overview: AP2306AGEN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Capable of 2.5V Gate Drive ▼ Small Outline Package ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free SOT-23 D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S G 30V 50mΩ 4.
| Part number | AP2306AGEN-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 91.79 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP2306AGEN-HF-AdvancedPowerElectronics.pdf |
|
|
|
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.
The SOT-23 package is widely used for commercial-industrial applications.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 30 +6 4.1 3.3 16 1.38 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit ℃/W 1 201208081 Data and specifications subject to change without notice AP2306AGEN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=4.5V, ID=4A VGS=2.5V, ID=3A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS=VGS, ID=250uA VDS=10V, ID=3A VDS=30V, VGS=0V VGS=+6V, VDS=0V ID=3A VDS=15V VGS=4.5V VDS=15V ID=1A RG=3.3Ω VGS=5V VGS=0V VDS=25V f=1.0MHz Min.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AP2306AGN | N-Channel MOSFET | VBsemi |
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AP2306AGN-HF | N-Channel MOSFET | VBsemi |
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AP2306GN | N-Channel MOSFET | VBsemi |
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AP2306GN-HF | N-Channel MOSFET | VBsemi |
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AP2306N | N-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AP2306AGEN | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2306AGN | N-channel enhancement mode power MOSFET |
| AP2306AGN-HF | N-channel enhancement mode power MOSFET |
| AP2306AGN-HF-3 | N-channel enhancement mode power MOSFET |
| AP2306CGN-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2306GN | N-channel enhancement mode power MOSFET |
| AP2306GN-HF | N-channel enhancement mode power MOSFET |
| AP2306GN-HF-3 | N-channel Enhancement-mode Power MOSFET |
| AP2306N | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301AGN | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |