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AP2309MI - -20V P-Channel Enhancement Mode MOSFET

General Description

The AP2309MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = -20V ID =-12A RDS(ON) < 15mΩ @ VGS=-4.5V （Type：10mΩ）.

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Datasheet Details

Part number AP2309MI
Manufacturer APM
File Size 731.66 KB
Description -20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP2309MI Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP2309MI -20V P-Channel Enhancement Mode MOSFET The AP2309MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-12A RDS(ON) < 15mΩ @ VGS=-4.5V （Type：10mΩ） Application electronic cigarette Load switch Package Marking and Ordering Information Product ID Pack AP2309MI SOT23-3L Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ Continuous Drain Current, VGS @ -4.5V1 ID@TC=70℃ Continuous Drain Current, VGS @ -4.