Datasheet Summary
Description
-20V P-Channel Enhancement Mode MOSFET
The AP2309MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = -20V ID =-12A
RDS(ON) < 15mΩ @ VGS=-4.5V （Type：10mΩ）
Application electronic cigarette Load switch
Package Marking and Ordering Information
Product ID
Pack
SOT23-3L...
