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AP2309MI Datasheet -20v P-channel Enhancement Mode MOSFET

Manufacturer: APM

Overview: Description AP2309MI -20V P-Channel Enhancement Mode MOSFET The AP2309MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Datasheet Details

Part number AP2309MI
Manufacturer APM
File Size 731.66 KB
Description -20V P-Channel Enhancement Mode MOSFET
Datasheet AP2309MI-APM.pdf

General Description

AP2309MI -20V P-Channel Enhancement Mode MOSFET The AP2309MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

General

Key Features

  • VDS = -20V ID =-12A RDS(ON) < 15mΩ @ VGS=-4.5V (Type:10mΩ).

AP2309MI Distributor