AP2301MI -20V P-Channel Enhancement Mode MOSFET The AP2301MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
| Part Number | Manufacturer | Description |
|---|---|---|
| AP2301N | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE |
| AP2301 | ALLPOWER | P-Channel MOSFET |
| AP2301EN-HF | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301GN | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301 | BCD Semiconductor | 1.5A DDR TERMINATION REGULATOR |
| AP2301AGN | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301AGN-HF-3 | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301AGN-HF | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301GN-HF-3 | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301GN-HF | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
