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Description
AP2301MI
-20V P-Channel Enhancement Mode MOSFET
The AP2301MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = -20V ID =-4.2A
RDS(ON) <65mΩ @ VGS=-4.5V (Type:45mΩ)
Application
Battery protection Load switch Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
AP2301MI
SOT23-3L
2301M-AP
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
Continuous Drain Current, VGS @ -4.5V1
ID@TA=70℃
Continuous Drain Current, VGS @ -4.