AP2310AGN-HF Datasheet | Advanced Power Electronics Corp

Description AP2310A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-23 package with good thermal performance is widely preferred for all mercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 .Data Sheet.co.kr Rating 65 +20 3 2.3 12 1.38 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 90 Unit ℃/W 1 201206111 Data and specifications subject to change without notice Datasheet pdf - http://..net/ Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250u A VGS=10V, ID=3A VGS=4.5V, ID=2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS=VGS, ID=250u A VDS=10V, ID=3A VDS=48V, VGS=0V VGS=+20V, VDS=0V ID=3A VDS=30V VGS=4.5V VDS=30V ID=1A RG=3.3Ω VGS=10V VGS=0V VDS=25V f=1.0MHz .Data Sheet.co.kr Min. 65 1 - Typ. 62 88 1.7 7 6 1.5 3.5 5 6 17 3.5 460 35 30 1.4 Max. Units 80 120 3 25 +100 9.6 740 2.8...