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AP2310GN - N-Channel Power MOSFET

Key Features

  • s.
  • Simple Drive Requirement.
  • Small Package Outline.
  • Surface Mount Device D G S +0.2 2.8 -0.2 SOT-23-3 2.9+0.2 -0.2 0.4+0.1 -0.05 3 1 2 0.95+0.1 -0.1 1.9+0.2 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Gate 2.Soruce 3.Drain 0-0.1 +0.1 0.38 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA= 25 ℃ TA=70℃ Pulsed Drain Current.
  • Power Dissipation TA=25℃ Linear Der.

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SMD Type MOSFET N-Channel Power MOSFET AP2310GN ■ Features ● Simple Drive Requirement ● Small Package Outline ● Surface Mount Device D G S +0.2 2.8 -0.2 SOT-23-3 2.9+0.2 -0.2 0.4+0.1 -0.05 3 1 2 0.95+0.1 -0.1 1.9+0.2 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Gate 2.Soruce 3.Drain 0-0.1 +0.1 0.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA= 25 ℃ TA=70℃ Pulsed Drain Current * Power Dissipation TA=25℃ Linear Derating Factor Thermal Resistance.Junction-to-ambient Junction and Storage Temperature Range * 2.Pulse width ≤300us , duty cycle≤ 2%. Sy mb ol VD S VG S ID I DM PD Rt h Ja TJ , TSTG Rating 60 ±20 3 2. 3 10 1. 38 0.