AP2312GN Description
SOT-23 G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all mercial-industrial applications. D G S Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage.