Datasheet Summary
Description
-20V P-Channel Enhancement Mode MOSFET
The AP2311MI-L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = -20V ID =-6.8A
RDS(ON) < 24mΩ @ VGS=-4.5V (Type：21mΩ)
Application
Battery protection Load switch Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
SOT23-3L
2311M-L-AP...
