DESCRIPTION
AP2311MI-L -20V P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = -20V ID =-6.8A RDS(ON) < 24mΩ @ VGS=-4.5V (Type：21mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP2311MI-L SOT23-3L 2311M-L-AP ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current, VGS @ -4.5V1 Rating -20 ±12 -6.8 ID@TA=70℃ IDM PD@TA=25℃ Continuous Drain Current, VGS @ -4.5V1 Pulsed Drain Current2 Total Power Dissipation3 -5.4 -30 1.31 PD@TA=70℃ Total Power Dissipation3 0.74 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 125 RθJC Thermal resistance, junction-case 7.4 Qty(PCS) 3000 Units V V A A A W W ℃ ℃ ℃/W ℃/W AP2311MI-L REV1.0 永源微電子科技有限公司 1 AP2311MI-L -20V P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min Typ Max.
APM
