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AP2311MI-L - -20V P-Channel Enhancement Mode MOSFET

General Description

The AP2311MI-L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = -20V ID =-6.8A RDS(ON) < 24mΩ @ VGS=-4.5V (Type：21mΩ).

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Datasheet Details

Part number AP2311MI-L
Manufacturer APM
File Size 944.22 KB
Description -20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP2311MI-L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP2311MI-L -20V P-Channel Enhancement Mode MOSFET The AP2311MI-L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-6.8A RDS(ON) < 24mΩ @ VGS=-4.5V (Type：21mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP2311MI-L SOT23-3L 2311M-L-AP Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current, VGS @ -4.5V1 Rating -20 ±12 -6.