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AP2311MI-L Datasheet -20v P-channel Enhancement Mode MOSFET

Manufacturer: APM

Overview: Description AP2311MI-L -20V P-Channel Enhancement Mode MOSFET The AP2311MI-L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

Datasheet Details

Part number AP2311MI-L
Manufacturer APM
File Size 944.22 KB
Description -20V P-Channel Enhancement Mode MOSFET
Datasheet AP2311MI-L-APM.pdf

General Description

AP2311MI-L -20V P-Channel Enhancement Mode MOSFET The AP2311MI-L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

General

Key Features

  • VDS = -20V ID =-6.8A RDS(ON) < 24mΩ @ VGS=-4.5V (Type:21mΩ).

AP2311MI-L Distributor