DESCRIPTION
GENERAL FEATURES
VDS = 20V ID =6.0A AP2312CI 20V NChannel Enhancement Mode MOSFET RDS(ON) < 23mΩ @ VGS=4.5V （Type：18mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP2312C SOT23L ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID@TA=25℃ ID@TA=70℃ IDM Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 PD@TA=25℃ TSTG Total Power Dissipation3 Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-ambient 1 RθJC Thermal Resistance Junction-Case1 Marking 2312C Rating 20 ±12 6.0 3.9 20 1.25 -55 to 150 -55 to 150 85 74 Qty(PCS) 3000 Units V V A A A W ℃ ℃ ℃/W ℃/W AP2312CI REV1.0 永源微電子科技有限公司 1 AP2312CI 20V NChannel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min. Typ.
APM
