AP2312CI Overview
The AP2312CI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
AP2312CI datasheet PDF by APM.
| Part number | AP2312CI |
|---|---|
| Datasheet | AP2312CI-APM.pdf |
| File Size | 674.15 KB |
| Manufacturer | APM |
| Description | 20V NChannel Enhancement Mode MOSFET |
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The AP2312CI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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AP2312GN | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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AP2312GN-HF-3 | N-channel Enhancement-mode Power MOSFET | Advanced Power Electronics |
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