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AP2312CI - 20V NChannel Enhancement Mode MOSFET

General Description

The AP2312CI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V ID =6.0A AP2312CI 20V NChannel Enhancement Mode MOSFET RDS(ON) < 23mΩ @ VGS=4.5V （Type：18mΩ）.

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Datasheet Details

Part number AP2312CI
Manufacturer APM
File Size 674.15 KB
Description 20V NChannel Enhancement Mode MOSFET
Datasheet download datasheet AP2312CI Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description The AP2312CI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =6.0A AP2312CI 20V NChannel Enhancement Mode MOSFET RDS(ON) < 23mΩ @ VGS=4.5V （Type：18mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP2312C SOT23L Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID@TA=25℃ ID@TA=70℃ IDM Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.