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Advanced Power Electronics

AP2604Y Datasheet Preview

AP2604Y Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP2604Y
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Fast Switching Characteristic
Lower Gate Charge
Small Footprint & Low Profile Package
S
D
D
SOT-26
G
D
D
Description
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The S0T-26 package is universally used for all commercial-industrial
applications.
BVDSS
RDS(ON)
ID
G
30V
45mΩ
5.5A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 4.5V
Continuous Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
30
±20
5.5
4.4
20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Value
62.5
Unit
/W
Data and specifications subject to change without notice
200115041




Advanced Power Electronics

AP2604Y Datasheet Preview

AP2604Y Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP2604Y
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=4.8A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=2.4A
VDS=VGS, ID=250uA
VDS=10V, ID=4.8A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS= ±20V
ID=4.8A
VDS=24V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω,VGS=10V
RD=15Ω
VGS=0V
VDS=25V
f=1.0MHz
30 -
-V
- 0.02 - V/
- - 45 mΩ
- - 65 mΩ
1 - 3V
-7-S
- - 1 uA
- - 25 uA
- - ±100 nA
- 6 10 nC
- 2 - nC
- 3 - nC
- 6 - ns
- 8 - ns
- 15 - ns
- 4 - ns
- 440 705 pF
- 105 - pF
- 35 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=4.8A, VGS=0V
IS=4.8A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 15 - ns
- 7 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 156/W when mounted on min. copper pad.


Part Number AP2604Y
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 4 Pages
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