Datasheet4U Logo Datasheet4U.com

AP2604Y - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The S0T-26 package is universally used for all commercial-industrial applications.

📥 Download Datasheet

Datasheet preview – AP2604Y

📁 Similar Datasheet

  • AP2602 - Octave Remote Resistor-programmable Temperature Switches (BCD Semiconductor)
  • AP2603Y - P CHANNEL ENHANCEMENT MODE POWER MOSFET (ETC)
  • AP2605Y - P CHANNEL ENHANCEMENT MODE POWER MOSFET (ETC)
  • AP260N15MP - 150V N-Channel Enhancement Mode MOSFET (APM)
  • AP2623 - P-Channel Enhancement-Mode MOSFETs SMD (HAOHAI)
  • AP2625GY - Dual P-Channel MOSFET (VBsemi)
  • AP265 - Traditional Aerospace Contactor (TE)
  • AP265P - Traditional Aerospace Contactor (TE)
  • AP265XE97 - Traditional Aerospace Contactor (TE)
  • AP2697 - TRANSFORMERS (apx)
Other Datasheets by Advanced Power Electronics
  • AP2604CDT - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP2604GY - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP2604GY-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP2604GY-HF-3 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP2602GY - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP2602GY-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP2602GY-HF-3 - N-channel Enhancement-mode Power MOSFET
  • AP2602MT - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
AP2604Y Advanced Power Electronics Corp. ▼ Fast Switching Characteristic ▼ Lower Gate Charge ▼ Small Footprint & Low Profile Package SOT-26 D D S N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G D D 30V 45mΩ 5.5A ID Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The S0T-26 package is universally used for all commercial-industrial applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.5V Pulsed Drain Current 1 Rating 30 ±20 5.5 4.4 20 2 0.
Published: |