AP2604Y Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The S0T-26 package is universally used for all mercial-industrial applications. 62.5 Unit ℃/W Data and specifications subject to change without notice 200115041 AP2604Y @Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source...