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Advanced Power Electronics

AP2732GK Datasheet Preview

AP2732GK Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP2732GK
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower Gate Charge
Fast Switching Characteristic
RoHS Compliant
Description
D
SOT-223
D
G
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
30V
26mΩ
8.6A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
30
±20
8.6
6.8
30
2.7
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Value
45
Unit
/W
Data and specifications subject to change without notice
200526051-1/4




Advanced Power Electronics

AP2732GK Datasheet Preview

AP2732GK Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

www.DataSheet4U.com
AP2732GK
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=8A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=5A
VDS=VGS, ID=250uA
VDS=10V, ID=8A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS=±20V
ID=8A
VDS=25V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω,VGS=5V
RD=15Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
30 - - V
- 0.03 - V/
- - 26 mΩ
- - 40 mΩ
1 - 3V
- 11 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 9 15 nC
- 2 - nC
- 5 - nC
- 8 - ns
- 6 - ns
- 18 - ns
- 5 - ns
- 600 960 pF
- 150 - pF
- 110 - pF
- 1.7 2.6
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=2.1A, VGS=0V
IS=8A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 19 - ns
- 10 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 120 /W when mounted on Min. copper pad.
2/4


Part Number AP2732GK
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
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