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Advanced Power Electronics

AP2761P-A Datasheet Preview

AP2761P-A Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP2761P-A
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower On-resistance
Fast Switching Characteristic
Simple Drive Requirement
RoHS Compliant
G
D
S
Description
The TO-220 package is universally preferred for all commercial-
industrial applications. The device is suited for DC-DC ,AC-DC
converters for power applications.
BVDSS
RDS(ON)
ID
650V
1Ω
10A
G
D
S
TO-220
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
IAR
TSTG
TJ
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
650
±30
10
4.4
18
104
0.8
10
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
A
Max.
Max.
Value
1.2
62
Units
/W
/W
Data & specifications subject to change without notice
200705051-1/4




Advanced Power Electronics

AP2761P-A Datasheet Preview

AP2761P-A Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2761P-A
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=3.5A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
VDS=10V, ID=3.5A
VDS=600V, VGS=0V
VDS=480V, VGS=0V
VGS=±30V
ID=10A
VDS=520V
VGS=10V
VDD=320V
ID=10A
RG=10Ω,VGS=10V
RD=32Ω
VGS=0V
VDS=15V
f=1.0MHz
650 - - V
- 0.6 - V/
- - 1Ω
2 - 4V
- 4.5 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 53 85 nC
- 10 - nC
- 15 - nC
- 16 - ns
- 20 - ns
- 82 - ns
- 36 - ns
- 2770 4430 pF
- 320 - pF
- 8 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage3
Reverse Recovery Time3
Reverse Recovery Charge
Test Conditions
IS=10A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 610 - ns
- 8.64 - µC
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=1.2mH , RG=25Ω , IAS=10A.
3.Pulse width <300us , duty cycle <2%.
2/4


Part Number AP2761P-A
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
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