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Advanced Power Electronics
Advanced Power Electronics

AP2R403AGMT-HF Datasheet Preview

AP2R403AGMT-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2R403AGMT-HF pdf
Advanced Power
Electronics Corp.
AP2R403AGMT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
D
SO-8 Compatible with Heatsink
Low On-resistance
G
RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching,
resistance and cost-effectiveness.
ruggedized
device
design,
low on-
The PMPAK® 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink and
lower profile.
BVDSS
RDS(ON)
ID
30V
2.4mΩ
150A
D
D
D
D
S
S
S
G
PMPAK® 5x6
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TA=25
ID@TA=70
IDM
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip), VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1
PD@TC=25
PD@TA=25
EAS
TSTG
TJ
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+12
150
36.8
29.5
280
83.3
5
28.8
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Value
1.5
25
Units
/W
/W
Data & specifications subject to change without notice
1
201108081



Advanced Power Electronics
Advanced Power Electronics

AP2R403AGMT-HF Datasheet Preview

AP2R403AGMT-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP2R403AGMT-HF pdf
AP2R403AGMT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=20A
VGS=4.5V, ID=20A
VDS=VGS, ID=250uA
VDS=10V, ID=20A
VDS=24V, VGS=0V
VGS=+12V, VDS=0V
ID=20A
VDS=15V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω
VGS=10V
VGS=0V
VDS=15V
f=1.0MHz
f=1.0MHz
30 - - V
- 1.83 2.4 m
- 2.4 3.3 m
1 1.5 3
V
- 80 -
S
- - 10 uA
- - +100 nA
- 81 130 nC
- 20 - nC
- 40 - nC
- 22 - ns
- 14 - ns
- 115 - ns
- 55 - ns
- 10200 16320 pF
- 810 - pF
- 750 - pF
- 0.7 1.4 Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=20A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 40 - ns
- 50 - nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 60oC/W at steady state.
4.Starting Tj=25oC, VDD=25V, L=0.1mH, RG=25Ω, IAS=24A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Part Number AP2R403AGMT-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 4 Pages
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