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AP2R803GM-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

AP2R803 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number AP2R803GM-HF
Manufacturer Advanced Power Electronics
File Size 118.21 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP2R803GM-HF Datasheet
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Full PDF Text Transcription

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AP2R803GM-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Lower On-resistance ▼ Simple Drive Requirement D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G 30V 3.2mΩ 22.8A D ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free SO-8 S S S ID Description AP2R803 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
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