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AP2R803GS-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low

resistance and cost-effectiveness.

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Datasheet preview – AP2R803GS-HF

Datasheet Details

Part number AP2R803GS-HF
Manufacturer Advanced Power Electronics
File Size 117.89 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Advanced Power Electronics Corp. AP2R803GS-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low □on- resistance and cost-effectiveness. The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. BVDSS RDS(ON) ID G DS 30V 2.
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