Datasheet Details
| Part number | AP2R803GS-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 117.89 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP2R803GS-HF Download (PDF) |
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| Part number | AP2R803GS-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 117.89 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP2R803GS-HF Download (PDF) |
|
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Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low □on- resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
BVDSS RDS(ON) ID G DS 30V 2.8mΩ 80A TO-263(S) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current4 Continuous Drain Current4 Pulsed Drain Current1 Total Power Dissipation TSTG TJ Storage Temperature Range Operating Junction Temperature Range Rating 30 +20 80 80 300 104 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Data & specifications subject to change without notice Value 1.2 40 Units ℃/W ℃/W 1 201210121 AP2R803GS-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Advanced Power Electronics Corp.
AP2R803GS-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant &.
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