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AP4002H-HF-3 Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

G D S D (tab) TO-252 (H) The AP4002H-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as chopper regulators and DC/DC converters The through-hole TO-251 version, AP4002J-HF-3, is available where a small PCB footprint is required.

G D S D (tab) TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C IDM PD at TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Rating 600 ±30 2 8 20 0.16 2 Units V V A A W W/°C mJ A °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 20 2 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 6.25 62.5 110 Units °C/W °C/W °C/W Maximum Thermal Resistance, Junction-ambient Ordering Information AP4002H-HF-3TR : in RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel) AP4002J-HF-3TB : in RoHS-compliant halogen-free TO-251 shipped in tubes (80pcs/tube) ©2011 Advanced Power Electronics Corp.

Overview

Advanced Power Electronics Corp.

AP4002H/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement 100% Avalanche Test Fast Switching Characteristics RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID.