AP4032GYT-HF Datasheet | Advanced Power Electronics Corp

tion AP4032 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. G PMPAK ® 3 x 3 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 .Data Sheet.co.kr Rating 30 +20 15.5 12.4 60 3.57 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 5 35 Unit ℃/W ℃/W 1 201206011 Data and specifications subject to change without notice Datasheet pdf - http://..net/ Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Test Conditions VGS=0V, ID=250u A VGS=10V, ID=12A VGS=4.5V, ID=8A VDS=VGS, ID=250u A VDS=10V, ID=12A VDS=24V, VGS=0V VGS=+20V, VDS=0V ID=12A VDS=15V VGS=4.5V VDS=15V ID=1A RG=3.3Ω VGS=10V VGS=0V VDS=15V f=1.0MHz .Data Sheet.co.kr Min. 30 1 - Typ. 6.6 10 1.4 24 15 4 7 10 5 27 7 185 160 1.1 Max. Units 9 12.5...