AP40G120W - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Advanced Power Electronics

Datasheet Details

Part number	AP40G120W
Manufacturer	Advanced Power Electronics
File Size	90.50 KB
Description	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	AP40G120W-AdvancedPowerElectronics.pdf

▼ Advanced IGBT Technology ▼ Low Saturation Voltage VCE(sat)=3.15V@IC=40A ▼ Industry Standard TO-3P Package G C E Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25℃ IC@TC=100℃ ICM PD@TC=25℃ TSTG TJ TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case fo.

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Published: Sep 22, 2016 |