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Advanced Power Electronics

AP4P016I Datasheet Preview

AP4P016I Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP4P016I
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% UIS Test
D
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
S
Description
AP4P016 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
BVDSS
RDS(ON)
ID4
-40V
16mΩ
-36A
GD S
TO-220CFM(I)
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
-40 V
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
PD@TA=25
EAS
TSTG
TJ
Gate-Source Voltage
Drain Current, VGS @ 10V4
Drain Current, VGS @ 10V4
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
+20
-36
-23
-140
25
1.92
45
-55 to 150
-55 to 150
V
A
A
A
W
W
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
5
65
Units
/W
/W
1
201704111




Advanced Power Electronics

AP4P016I Datasheet Preview

AP4P016I Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP4P016I
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=-250uA
VGS=-10V, ID=-30A
VGS=-4.5V, ID=-20A
VDS=VGS, ID=-250uA
VDS=-5V, ID=-30A
VDS=-32V, VGS=0V
VGS= +20V, VDS=0V
ID=-20A
VDS=-32V
VGS=-4.5V
VDS=-20V
ID=-30A
RG=3.3Ω
VGS=-10V
VGS=0V
.VDS=-25V
f=1.0MHz
-40 - - V
- - 16 mΩ
- - 28 mΩ
-1 - -3 V
- 47 -
S
- - -10 uA
- - +100 nA
- 32 51.2 nC
- 11 - nC
- 12 - nC
- 10 - ns
- 58 - ns
- 90 - ns
- 100 - ns
- 3600 5760 pF
- 285 - pF
- 175 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=-30A, VGS=0V
IS=-30A, VGS=0V,
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 14 - ns
- 4.5 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=-30V , L=0.1mH , RG=25Ω
4.Ensure that the junction temperature does not exceed T Jmax..
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Part Number AP4P016I
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
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