AP4P016I
AP4P016I is P-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by Advanced Power Electronics Corp.
Description
AP4P016 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
BVDSS
RDS(ON) ID4
-40V 16mΩ -36A
GD S
TO-220CFM(I)
The TO-220CFM package is widely preferred for all mercialindustrial through hole applications. The mold pound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
-40 V
VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ
Gate-Source Voltage Drain Current, VGS @ 10V4 Drain Current, VGS @ 10V4 Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
+20 -36 -23 -140 25 1.92 45 -55 to 150 -55 to 150
V A A A W W m J ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value 5 65
Units ℃/W ℃/W
1 201704111
Electrical Characteristics@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss...
