Advanced Power
Electronics Corp.
AP4P016I
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% UIS Test
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
S
Description
AP4P016 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
BVDSS
RDS(ON)
ID4
-40V
16mΩ
-36A
GD S
TO-220CFM(I)
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
-40 V
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
PD@TA=25℃
EAS
TSTG
TJ
Gate-Source Voltage
Drain Current, VGS @ 10V4
Drain Current, VGS @ 10V4
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
+20
-36
-23
-140
25
1.92
45
-55 to 150
-55 to 150
V
A
A
A
W
W
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
5
65
Units
℃/W
℃/W
1
201704111
