AP50G60SW transistor equivalent, n-channel insulated gate bipolar transistor.
▼ High Speed Switching ▼ Low Saturation Voltage
VCE(sat),Typ.=2.6V@IC=33A ▼ Built-in Fast Recovery Diode
G C E
C VCES IC
TO-3P
G
Absolute Maximum Ratings
Symbol
Pa.
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