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AP50G60W-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ. =2.5V@IC=40A ▼ RoHS Compliant & Halogen-Free N-.

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AP50G60W-HF Halogen-Free Product Advanced Power Electronics Corp. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ. =2.5V@IC=40A ▼ RoHS Compliant & Halogen-Free N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR C VCES IC 600V 40A C G C E TO-3P G E Absolute Maximum Ratings Symbol VCES VGE IC@TC=25oC IC@TC=100oC ICM PD@TC=25oC TSTG TJ TL Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds . Parameter Collector-Emitter Voltage Rating 600 +30 75 40 150 277 -55 to 150 150 300 Units V V A A A W o o o C C C Notes: 1.Pulse width limited by max. junction temperature . http://www.