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AP50GT60SW-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ. =1.85V@IC=45A ▼ Built-in Fast Recovery Diode ▼ RoHS Compliant & Halogen-Free N-.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP50GT60SW-HF Halogen-Free Product Advanced Power Electronics Corp. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ.=1.85V@IC=45A ▼ Built-in Fast Recovery Diode ▼ RoHS Compliant & Halogen-Free N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR C VCES IC 600V 45A C G C E TO-3P G E Absolute Maximum Ratings Symbol VCES VGE IC@TC=25oC o IC@TC=100 C Parameter Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds .