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AP50L02S - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP50L02S datasheet PDF. This datasheet also covers the AP50L02P variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP50L02P_AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP50L02P N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP50G60SW N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP50G60SW-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
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AP50GT60SW-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AP50L02S/P Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 17mΩ 40A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP50L02P) is available for low-profile applications. G D G D S TO-263(S) Absolute Maximum Ratings http://www.DataSheet4U.net/ S Rating 25 ± 20 40 27 140 44.6 0.