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AP60L02GS - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP60L02GS datasheet PDF. This datasheet also covers the AP60L02GP variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Note: The manufacturer provides a single datasheet file (AP60L02GP_AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for AP60L02GS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AP60L02GS. For precise diagrams, and layout, please refer to the original PDF.

AP60L02GS/P Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ www.DataSheet4U.com ▼ Fast Switching G S D N-CHANNEL E...

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e Requirement ▼ www.DataSheet4U.com ▼ Fast Switching G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 12mΩ 50A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60L02GP) is available for low-profile applications. G D G D S TO-263(S) TO-220(P) S Rating 25 ± 20 50 32 180 62.5 0.

More Datasheets from Advanced Power Electronics Corp

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AP60L02GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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