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AP60L02P - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Full PDF Text Transcription for AP60L02P (Reference)

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AP60L02S/P Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 25...

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et4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 25V 12mΩ 50A ▼ Fast Switching G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60L02P) is available for low-profile applications. G D G D S TO-263(S) TO-220(P) S Rating 25 ± 20 50 32 180 62.5 0.

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