Datasheet Details
| Part number | AP6680GM |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 105.78 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP6680GM Download (PDF) |
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| Part number | AP6680GM |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 105.78 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP6680GM Download (PDF) |
|
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D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ± 25 11.5 9.5 50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max.
50 Unit ℃/W Data and specifications subject to change without notice 200902302 Free Datasheet http://www.datasheet4u.com/ AP6680GM Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min.
AP6680GM Pb Free Plating Product Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ High Vgs Max Rating Voltage ▼ Surface Mount Package D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G 30V 11mΩ 11.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ALLPOWER | AP6680ZF | One Cell Li-ion and Li-poly Battery Protection IC | ALLPOWER |
| Part Number | Description |
|---|---|
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