AP6800GEO Datasheet - Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP6800GEO General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Sour.

AP6800GEO Datasheet (106.14 KB)

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AP6800GEO

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Advanced Power Electronics

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106.14 KB

Description:

N-channel enhancement mode power mosfet.
AP6800GEO Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Optimal DC/DC battery applicati.

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AP6800GEO N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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AP6800GEO General Description

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