Datasheet Details
| Part number | AP6900GSM |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 130.40 KB |
| Description | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP6900GSM Download (PDF) |
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| Part number | AP6900GSM |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 130.40 KB |
| Description | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP6900GSM Download (PDF) |
|
|
|
S1/D2 S1/D2 S1/D2 G1 SO-8 S2/A G2 D1 D1 CH-1 CH-2 BVDSS RDS(ON) ID BVDSS RDS(ON) ID The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D1 G1 N-Channel 1 MOSFET 30V 30mΩ 5.7A 30V 22mΩ 9.8A S1/D2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range G2 N-Channel 2 MOSFET S2/A Schottky Diode Rating Channel-1 Channel-2 30 30 ±20 ±20 5.7 9.8 4.6 7.8 20 30 1.4 2.2 0.01 0.02 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Thermal Data Symbol Parameter Rthj-a (CH-1) Rthj-a (CH-2) Thermal Resistance Junction-ambient3 Thermal Resistance Junction-ambient3 Value Typ.
Advanced Power Electronics Corp.
AP6900GSM Pb Free Plating Product DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE ▼ Simple Drive Requirement ▼ DC-DC Converter Suitable ▼ Fast Switching.
| Part Number | Description |
|---|---|
| AP6900GSM-HF | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP6900GH-HF | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP6901GSM-HF | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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