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AP6900GSM-HF - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

low on-resistance and cost-effectiveness.

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Full PDF Text Transcription for AP6900GSM-HF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AP6900GSM-HF. For precise diagrams, and layout, please refer to the original PDF.

Advanced Power Electronics Corp. AP6900GSM-HF Halogen-Free Product DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE ▼ Simple Drive Requirement ▼ DC-DC Converter Suitable ▼ Fast ...

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KY DIODE ▼ Simple Drive Requirement ▼ DC-DC Converter Suitable ▼ Fast Switching Performance ▼ RoHS Compliant Description S1/D2 S1/D2 S1/D2 G1 SO-8 S2/A G2 D1 D1 CH-1 CH-2 BVDSS RDS(ON) ID BVDSS RDS(ON) ID Advanced Power MOSFETs from APEC provide the designer with D1 the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 30V 30mΩ 5.7A 30V 22mΩ 9.8A The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

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