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AP6901GSM-HF Datasheet DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

CH-1 S2/A G2 D1D1 CH-2 BVDSS RDS(ON) ID BVDSS RDS(ON) ID Advanced Power MOSFETs from APEC provide the D1 designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness.

The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

G1 N-Channel 1 MOSFET 30V 16.5mΩ 7.1A 30V 16mΩ 9.2A S1/D2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range G2 N-Channel 2 MOSFET S2/A Schottky Diode Rating Channel-1 Channel-2 30 30 +20 +20 7.1 9.2 5.7 7.4 30 30 1.4 2.2 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-a (CH-1) Rthj-a (CH-2) Thermal Resistance Junction-ambient3 Thermal Resistance Junction-ambient3 Value Typ.

Overview

Advanced Power Electronics Corp.

AP6901GSM-HF Halogen-Free Product DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE ▼ Simple Drive Requirement ▼ DC-DC Converter Suitable S1/D2 S1/D2 S1/D2 G1 ▼ Fast Switching Performance ▼ RoHS.