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AP6902AGH-HF Datasheet DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

SDPAKTM Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device D1 design, ultra low on-resistance and cost-effectiveness.

SDPAKTM used APEC innovated package and provides two G1 independent device that is suitable and optimum for DC/DC power application.

G2 S1 30V 9.2mΩ 52A D2 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 30 +20 52 13.8 11 50 3 -55 to 150 -55 to 150 Units V V A A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 3 42 Unit ℃/W ℃/W 1 201303041 AP6902AGH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.

Overview

Advanced Power Electronics Corp.

AP6902AGH-HF Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Fast Switching Performance BV D1 (TAB1) D2 (TAB2) DSS RDS(ON) ▼ Two.