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AP6902GH-HF Datasheet DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

SDPAKTM used APEC innovated package and provides two independent device that is suitable and optimum for DC/DC power application.

BVDSS RDS(ON) ID 30V 10mΩ 42A D1 (TAB1) D2 (TAB2) S1 G1 S2 G2 SDPAKTM D1 D2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range G1 G2 S1 Rating 30 +20 42 13 10.3 60 3 -55 to 150 -55 to 150 Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Value 4.0 42 S2 Units V V A A A A W ℃ ℃ Unit ℃/W ℃/W Data and specifications subject to change without notice 1 20090420pre AP6902GH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.

Overview

Advanced Power Electronics Corp.

AP6902GH-HF Preliminary DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Fast Switching Performance ▼ Two Independent Device ▼ Halogen Free & RoHS Compliant.