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AP6906GH-HF Datasheet DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

SDPAKTM used APEC innovated package and provides two independent device that is suitable and optimum for DC/DC power application.

BVDSS RDS(ON) ID 60V 40mΩ 16.4A D1 (TAB1) D2 (TAB2) S1 G1 S2 G2 SDPAKTM D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Rating 60 +20 16.4 6.2 5 30 3 -55 to 150 -55 to 150 Units V V A A A A W ℃ ℃ Value 6.0 42 Unit ℃/W ℃/W 1 20090716pre AP6906GH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.

Overview

Advanced Power Electronics Corp.

AP6906GH-HF Preliminary DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Fast Switching Performance ▼ Two Independent Device ▼ Halogen Free & RoHS Compliant.