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AP73T02GJB - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

General Description

AP73T02 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Other Datasheets by Advanced Power Electronics Corp

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AP73T02GJ-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP73T02GH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP73T03AGH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Power Electronics Corp. AP73T02GJB Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free S Description AP73T02 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted. BVDSS RDS(ON) ID 25V 9mΩ 57A GD S TO-251S(JB) Absolute Maximum Ratings@Tj=25oC.