INSULATED Datasheet | Specifications & PDF Download

Scotchlok™ Terminals M18BC, M14BC, M10BC Butt Connector, Non-Insulated, Seamless L Data Sheet Product Number Wire Range (L A WG ) Thickness Barre

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Scotchlok™ Terminals M18BC, M14BC, M10BC Butt Connector, Non-Insulated, Seamless L Data Sheet Product Number Wire Range (L A WG ) Thickness Barre

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Scotchlok™ Terminals M18BC, M14BC, M10BC Butt Connector, Non-Insulated, Seamless L Data Sheet Product Number Wire Range (L A WG ) Thickness Barre

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GT45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123 For PDP-TV Applications • • • • • 5th generation (trench gate stru

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www.DataSheet4U.com PD - 94381E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KD IRGS6B60KD IRGSL6B60KD VCES = 600

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IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE (ON) Trench IGBT

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BT40T60 ANFD ○R BT40T60 ANFD FS IGBT ， ，。 RoHS 。 ● FS ，； ● ：VCE(sat),TYP=1.8V @IC=40A,VGE=15V ； VCES IC Ptot （TC=25℃） VCE(sat) 600 40 280

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XS4202 ® XS4202 Pb Free Plating Product Pb 20Ampere,200Volt Insulated Fast Recovery Diode for Welding Machine APPLICATION · Freewheeling, Snubber

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PD - 97576 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Sw

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AUTOMOTIVE GRADE AUIRGPS4067D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features  Low VCE (on) Trench IGBT Technology

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MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING 20MAX. Dimensions in mm 5 2 φ3.2 6 1 2 1 Œ  Ž

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PD 91459B IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR Features www.DataSheet4U.com C Fast Speed IGBT • Fast: Optimized for medium operating frequen

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PD- 91576A IRG4PH50K AC www.irf.com 1 10/26/09 IRG4PH50K 2 www.irf.com IRG4PH50K www.irf.com 3 IRG4PH50K 4 www.irf.com IRG4PH50K www.irf.com

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FRH10A045 thru FRH10A20 ® FRH10A045/FRH10A06/FRH10A10/FRH10A15/FRH10A20 Pb Pb Free Plating Product 10.0 Ampere Insulated Dual Common Anode Schott

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PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast Non Punch Through (NPT) Technology • 10 µs Short Circuit capability •

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PD 91449B IRG4BC20UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequenc

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  IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V   IC = 60A, TC =100°C tSC 5µs, TJ(

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