IRGS4B60KD1
International Rectifier
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Insulated gate bipolar transistor.
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IRGS4B60KD1PBF - Insulated Gate Bipolar Transistor
(International Rectifier)
PD - 95616A
IRGB4B60KD1PbF
IRGS4B60KD1PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4B60KD1PbF
ULTRAFAST SOFT RECOVERY DIODE Features
C VCES = .
IRGS4B60KPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 95643A
INSULATED GATE BIPOLAR TRANSISTOR
Features
• • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Squ.
IRGS4045DPBF - Insulated Gate Bipolar Transistor
(International Rectifier)
IRGS4045DPbF
VCES = 600V IC 6.0A, TC = 100°C
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
CC
tsc > 5µs, Tjmax = 175°C VCE.
IRGS4055PBF - PDP Trench IGBT
(International Rectifier)
PD - 97058B
PDP TRENCH IGBT
Features Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l L.
IRGS4056DPbF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 96197
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology • Low switching losse.
IRGS4062DPBF - Power MOSFET
(International Rectifier)
PD - 97355B
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
• • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low.
IRGS4064DPBF - Power MOSFET
(International Rectifier)
PD - 96424
IRGS4064DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• • • • • • • • • • Low VCE (on) Trench IGBT Te.
IRGS4065PBF - IGBT
(International Rectifier)
..
PD - 97059B
PDP TRENCH IGBT
Features Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP.
IRGS4086PbF - PDP Trench IGBT
(International Rectifier)
PD - 96222
PDP TRENCH IGBT
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM) l .
IRGS4607DPBF - Insulated Gate Bipolar Transistor
(International Rectifier)
VCES = 600V IC = 7.0A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.75V @ IC = 4.0A
IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF
Insulated Gate.