IRGS4B60KD1PBF Datasheet, Transistor, International Rectifier

IRGS4B60KD1PBF Features

• Transistor C VCES = 600V
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coeffi

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Part number:

IRGS4B60KD1PBF

Manufacturer:

International Rectifier

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434.12kb

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📄 Datasheet

Description:

Insulated gate bipolar transistor.

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IRGS4B60KD1PBF

International Rectifier

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