IRGS4B60KD1PBF

Insulated Gate Bipolar Transistor

International Rectifier

* C VCES = 600V

* Low VCE (on) Non Punch Through IGBT Technology.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Positive VCE (on) Temperature Coefficient.

* Maximum Junction Temperature rated at 175°C.

* Lead-Free G E n-channel IC = 7.6A, TC=100

IRGS4B60KD1PBF

International Rectifier

434.12 KB

Insulated gate bipolar transistor.

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