IRGS4B60KD1PBF Datasheet - International Rectifier

Datasheet Details

Part number:

IRGS4B60KD1PBF

Manufacturer:

International Rectifier

File Size:

434.12 KB

Description:

Insulated gate bipolar transistor.

IRGS4B60KD1PBF, Insulated Gate Bipolar Transistor

IRGS4B60KD1PBF Features

* C VCES = 600V

* Low VCE (on) Non Punch Through IGBT Technology.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Positive VCE (on) Temperature Coefficient.

* Maximum Junction Temperature rated at 175°C.

* Lead-Free G E n-channel IC = 7.6A, TC=100

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