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IRGS4B60KD1PBF Insulated Gate Bipolar Transistor

IRGS4B60KD1PBF Description

PD - 95616A IRGB4B60KD1PbF IRGS4B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4B60KD1PbF ULTRAFAST SOFT RECOVERY DIODE .

IRGS4B60KD1PBF Features

* C VCES = 600V
* Low VCE (on) Non Punch Through IGBT Technology.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Positive VCE (on) Temperature Coefficient.
* Maximum Junction Temperature rated at 175°C.
* Lead-Free G E n-channel IC = 7.6A, TC=100

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Insulated Gate Bipolar Transistor International Rectifier
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