Datasheet4U Logo Datasheet4U.com

IRGS4620DPbF

IGBT

IRGS4620DPbF Features

* Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power capability Positive VCE (ON) temperature coeffici

IRGS4620DPbF Datasheet (966.15 KB)

Preview of IRGS4620DPbF PDF

Datasheet Details

Part number:

IRGS4620DPbF

Manufacturer:

Infineon ↗

File Size:

966.15 KB

Description:

Igbt.
VCES = 600V IC = 20A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.55V @ IC = 12A Applications

* Industrial Motor Drive

* Inv.

📁 Related Datasheet

IRGS4620DPBF Power MOSFET (International Rectifier)

IRGS4607DPBF Insulated Gate Bipolar Transistor (International Rectifier)

IRGS4610DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGS4615DPBF Power MOSFET (International Rectifier)

IRGS4630DPBF Insulated Gate Bipolar Transistor (International Rectifier)

IRGS4630DPbF IGBT (Infineon)

IRGS4640DPbF Insulated Gate Bipolar Transistor (Infineon)

IRGS4045DPBF Insulated Gate Bipolar Transistor (International Rectifier)

IRGS4055PBF PDP Trench IGBT (International Rectifier)

IRGS4056DPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

TAGS

IRGS4620DPbF IGBT Infineon

Image Gallery

IRGS4620DPbF Datasheet Preview Page 2 IRGS4620DPbF Datasheet Preview Page 3

IRGS4620DPbF Distributor